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PAM-XIAMEN provides InGaAsN epitaxially on GaAs or InP wafers as follows Layer Doping Thickness (um) Remark
GaAs undoped ~500 <001> wafer substrate
InGaAsN* undoped 0.150 band gap <1 eV
Al(0.3)Ga(0.7)As undoped 0.5
GaAs undoped 2 ? ? ? ?
Al(0.3)Ga(0.7)As undoped 0.5

ITEM xy Doping carrier conc.(cm-3) Thickness?um? wave length(um) Lattice mismatch
InAs(y)P 0.25 none 5.0*10^16 1 ?
In(x)GaAs 0.63 none - 1.0*10^17 3 1.9 600<>600
InAs(y)P 0.25 S 1.0*10^18 205?
InAs(y)P 0.05->0.25 S 1.0*10^18 4 - ?
InP - - - S 1.0*10^18- 0.3 - ?
Substrate: -InP ? S (1-3)*10^18 ~350

Source:PAM-XIAMEN

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In 2001,PAM-XIAMEN has established production line of semiconductor materials - Ge(Germanium) Single Crystals and Wafers.

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PAM-XIAMEN's products are widely used all over the world. We are always dedicated to supplying every customer reliable semiconductor products of high quality at very competitive prices. Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be, to maintain sustained and profitable growth for every customer through our qualified products and satisfying service. Our mission is to create the value for the society and the well-being life for the employee.

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